RADIATION TOLERANCE OF AMORPHOUS-SEMICONDUCTORS

被引：2
|
作者：
NICOLAIDES, RV [1 ]
DEFEO, S [1 ]
DOREMUS, LW [1 ]
机构：
[1] PICATINNY ARSENAL,FELTMAN RES LAB,DOVER,NJ 07801
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1976年 / 23卷 / 01期
关键词：
D O I：
10.1109/TNS.1976.4328353
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：839 / 848
页数：10
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