RADIATION TOLERANCE OF AMORPHOUS-SEMICONDUCTORS

被引：2

作者：

NICOLAIDES, RV ^{[1
]}

DEFEO, S ^{[1
]}

DOREMUS, LW ^{[1
]}

机构：

[1] PICATINNY ARSENAL,FELTMAN RES LAB,DOVER,NJ 07801

来源：

关键词：

D O I：

10.1109/TNS.1976.4328353

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：839 / 848

页数：10

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