DYNAMIC SCALING OF WETTING LAYER GROWTH

被引：12
|
作者：
PAK, HK
LAW, BM
机构：
[1] Department of Physics, Kansas State University, Manhattan, KS
来源：
EUROPHYSICS LETTERS | 1995年 / 31卷 / 01期
关键词：
D O I：
10.1209/0295-5075/31/1/004
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have studied the growth of a wetting layer at the surface of a critical mixture of hexadecane and acetone from a quiescent bulk phase. The wetting layer exhibits universal dynamic scaling behavior as a function of t/t(D), where t(D) is the characteristic diffusion time. The thickness increases linearly with time and the time to reach equilibrium is 10(8)t(D). We propose a simple model which qualitatively explains this behavior.
引用
收藏
页码：19 / 24
页数：6
相关论文
共 50 条
  • [21] Dynamic scaling of migration-driven aggregate growth
    Ke, JH
    Wang, XH
    Lin, ZQ
    Zhuang, YY
    [J]. CHINESE PHYSICS, 2004, 13 (05): : 772 - 777
  • [22] Dynamic scaling in growth of holes in ballistic deposition model
    Li, Yifan
    Xia, Hui
    [J]. Jisuan Wuli/Chinese Journal of Computational Physics, 2009, 26 (06): : 931 - 936
  • [23] ON THE DYNAMIC SCALING BEHAVIOR IN NUCLEATION AND GROWTH-KINETICS
    LORENZ, B
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1987, 142 (02): : 407 - 410
  • [24] DYNAMIC SCALING AND PHASE-TRANSITIONS IN INTERFACE GROWTH
    FAMILY, F
    [J]. PHYSICA A, 1990, 168 (01): : 561 - 580
  • [25] Effects of growth interruption during growth of InAs wetting layer on formation of InAs quantum dots
    Morishita, Y
    Osada, K
    Hasegawa, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (5A): : 2925 - 2928
  • [26] Effects of growth interruption during growth of InAs wetting layer on formation of InAs quantum dots
    [J]. Morishita, Y. (morisita@cc.tuat.ac.jp), 1600, Japan Society of Applied Physics (44):
  • [27] SCALING PROCEDURE FOR AES INVESTIGATIONS OF THIN-LAYER GROWTH
    SIUDA, R
    [J]. SURFACE SCIENCE, 1984, 140 (02) : 472 - 490
  • [28] Stranski-Krastanov growth of (In,Ga)As quantum dots by controlling the wetting layer
    Kita, T
    Nakahama, M
    Yamashita, K
    Wada, O
    [J]. COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 525 - 530
  • [29] Optical properties of wetting layer in InAs quantum dots at different growth temperatures
    Kim, JS
    Bae, IH
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S483 - S486
  • [30] Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes
    van der Laak, N. K.
    Oliver, R. A.
    Kappers, M. J.
    McAleese, C.
    Humphreys, C. J.
    [J]. Microscopy of Semiconducting Materials, 2005, 107 : 13 - 16
12345