Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes

被引：0

作者：

van der Laak, N. K. ^{[1
]}

Oliver, R. A. ^{[1
]}

Kappers, M. J. ^{[1
]}

McAleese, C. ^{[1
]}

Humphreys, C. J. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

Microscopy of Semiconducting Materials | 2005年 / 107卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated InGaN nanostructures grown by atmospheric pressure metal-organic vapour phase epitaxy. The variation of the 3D nanostructure density and the wetting layer thickness with growth time have been studied. The nanostructure density was found to saturate with increasing growth time, but unexpectedly, the nanostructure size was also seen to stabilise. We have used high-resolution transmission electron microscopy (HRTEM) to further investigate the wetting layer growth and quantify changes with InGaN growth time.

引用

页码：13 / 16

页数：4

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