THE DISTRIBUTION OF CHARGE BELOW THE (001) SURFACES OF GALLIUM-ARSENIDE

被引：3

|

作者：

LOWTHER, JE

机构：

来源：

SURFACE SCIENCE | 1986年 / 172卷 / 01期

关键词：

D O I：

10.1016/0039-6028(86)90585-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：81 / 89

页数：9

相关论文

共 50 条

[31] GALLIUM-ARSENIDE ON SILICON
SHICHIJO, H
ELECTRONICS & WIRELESS WORLD, 1988, 94 (1628): : 609 - 609
[32] GALLIUM-ARSENIDE CHIPS IN
MARTIN, D
CHEMISTRY IN BRITAIN, 1992, 28 (03) : 211 - 212
[33] INVESTIGATION OF ALUMINUM GALLIUM-ARSENIDE GALLIUM-ARSENIDE SUPERLATTICES BY ATOMIC FORCE MICROSCOPY
FRIEDBACHER, G
HANSMA, PK
SCHWARZBACH, D
GRASSERBAUER, M
NICKEL, H
ANALYTICAL CHEMISTRY, 1992, 64 (17) : 1760 - 1762
[34] A STUDY OF GALLIUM-ARSENIDE AND ALUMINUM GALLIUM-ARSENIDE REACTIVE ION ETCHING PARAMETERS
SCHERER, A
BEEBE, E
CRAIGHEAD, HG
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1604 - 1605
[35] MICROSTRUCTURAL CHARACTERIZATION OF PATTERNED GALLIUM-ARSENIDE GROWN ON (001) SILICON SUBSTRATES
MATYI, RJ
SHICHIJO, H
MOORE, TM
TSAI, HL
APPLIED PHYSICS LETTERS, 1987, 51 (01) : 18 - 20
[36] DISTRIBUTION OF RADIATION DEFECTS IN GALLIUM-ARSENIDE IRRADIATED WITH DEUTERONS
MAMONTOV, AP
ZAKHAROV, BG
GAMAN, VI
OKUNEV, VD
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (05): : 747 - &
[37] STRUCTURAL CHARACTERIZATION OF GALLIUM-ARSENIDE EPITAXIAL LAYERS GROWN ON SI(001)
ALBERTS, V
NEETHLING, JH
VERMAAK, JS
MATERIALS LETTERS, 1992, 13 (2-3) : 65 - 79
[38] MOBILITY DEGRADATION AND TRANSFERRED ELECTRON EFFECT IN GALLIUM-ARSENIDE AND INDIUM GALLIUM-ARSENIDE
ARORA, VK
MUI, DSL
MORKOC, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (06) : 1231 - 1238
[39] DISTRIBUTION FUNCTION RELAXATION-TIMES IN GALLIUM-ARSENIDE
WARRINER, RA
IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1977, 1 (03): : 92 - 96
[40] PECULIARITIES OF DISLOCATION DISTRIBUTION IN EPITAXIAL LAYERS OF GALLIUM-ARSENIDE
DRANENKO, AS
NOVIKOV, NN
IVANOV, VN
UKRAINSKII FIZICHESKII ZHURNAL, 1982, 27 (11): : 1668 - 1670

← 1 2 3 4 5 →