MOVPE GROWTH OF HIGH-QUALITY SELECTIVELY DOPED N-INGAP GAAS HETEROSTRUCTURES

被引：0

作者：

TAKECHI, M ^{[1
]}

OHORI, T ^{[1
]}

TAKIKAWA, M ^{[1
]}

KOMENO, J ^{[1
]}

机构：

[1] FUJITSU LABS LTD,ATSUGI 24301,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C452 / C452

页数：1

共 50 条

[1] PSEUDOMORPHIC N-INGAP/INGAAS/GAAS SELECTIVELY DOPED HETEROSTRUCTURES GROWN BY ATMOSPHERIC-PRESSURE MOVPE
OHORI, T
TAKECHI, M
TAKIKAWA, M
KOMENO, J
[J]. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 131 - 134
[2] PSEUDOMORPHIC N-INGAP/INGAAS/GAAS SELECTIVELY DOPED HETEROSTRUCTURES GROWN BY ATMOSPHERIC-PRESSURE MOVPE
OHORI, T
TAKECHI, M
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KOMENO, J
[J]. INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 131 - 134
[3] UNIFORM AND ABRUPT INGAP/GAAS SELECTIVELY DOPED HETEROSTRUCTURES GROWN BY MOVPE FOR HEMT ICS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 905 - 910
[4] MOVPE GROWTH OF SELECTIVELY DOPED ALGAAS GAAS HETEROSTRUCTURES WITH TERTIARYBUTYLARSINE
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (06): : L901 - L903
[5] PSEUDOMORPHIC N-INGAP/INGAAS/GAAS GROWN BY MOVPE FOR HEMT LSIS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 942 - 946
[6] THE GROWTH AND CHARACTERIZATION OF HIGH-QUALITY MOVPE GAAS AND GAALAS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 282 - 294
[7] DOPED INGAP GROWN BY MOVPE ON GAAS
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MORI, K
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[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 27 - 31
[8] MOMBE GROWTH OF HIGH-QUALITY GAAS/GAINP HETEROSTRUCTURES
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[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 1076 - 1076
[9] MOVPE growth of InGaP/GaAs interfaces
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[J]. HETEROSTRUCTURE EPITAXY AND DEVICES: HEAD '97, 1998, 48 : 123 - 126
[10] n-InGaP/InGaAs/GaAs赝配HEMT
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[J]. 微纳电子技术, 1993, (05) : 65 - 65

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