NONDESTRUCTIVE EVALUATION OF THE PARAMETERS OF SILICON EPITAXIAL, STRUCTURES BY LONGWAVE SPECTROSCOPY

被引：0
|
作者：
KOPYLOV, AA
TELPOV, SE
机构：
来源：
RUSSIAN JOURNAL OF NONDESTRUCTIVE TESTING | 1995年 / 31卷 / 03期
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暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Results are presented from theoretical and experimental studies into the development of effective methods of evaluating the parameters of microelectronics materials on the basis of longwave infrared Fourier spectroscopy. Layer thicknesses are determined and estimates are made of the concentrations and mobilities of charge carriers in the substrate. The metrological characteristics of the method are substantiated in experimental studies of silicon structures.
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页码：186 / 189
页数：4
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