NONDESTRUCTIVE EVALUATION OF THE PARAMETERS OF SILICON EPITAXIAL, STRUCTURES BY LONGWAVE SPECTROSCOPY

被引：0
|
作者：
KOPYLOV, AA
TELPOV, SE
机构：
来源：
RUSSIAN JOURNAL OF NONDESTRUCTIVE TESTING | 1995年 / 31卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Results are presented from theoretical and experimental studies into the development of effective methods of evaluating the parameters of microelectronics materials on the basis of longwave infrared Fourier spectroscopy. Layer thicknesses are determined and estimates are made of the concentrations and mobilities of charge carriers in the substrate. The metrological characteristics of the method are substantiated in experimental studies of silicon structures.
引用
收藏
页码：186 / 189
页数：4
相关论文
共 50 条
  • [31] Laser spectroscopy methods for nondestructive analysis of polycrystalline silicon thin films and silicon surfaces
    Milovzorov, D
    Chigarev, N
    HIGH PURITY SILICON VI, 2000, 4218 : 596 - 605
  • [32] NATURE AND PARAMETERS OF RADIATION DEFECTS IN EPITAXIAL LAYERS OF SILICON
    KUZNETSOV, VI
    LUGAKOV, PF
    TSIKUNOV, AV
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1987, 103 (1-4): : 187 - 195
  • [33] DEFECT STRUCTURES IN SILICON MERGED EPITAXIAL LATERAL OVERGROWTH
    SAMAVEDAM, SB
    KVAM, EP
    KABIR, AE
    NEUDECK, GW
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) : 1747 - 1751
  • [34] SILICON ON INSULATOR STRUCTURES OBTAINED BY EPITAXIAL-GROWTH OF SILICON OVER POROUS SILICON
    OULES, C
    HALIMAOUI, A
    REGOLINI, JL
    PERIO, A
    BOMCHIL, G
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (12) : 3595 - 3599
  • [35] MICRODEFECT INHERITANCE BY EPITAXIAL-FILMS IN SILICON STRUCTURES
    POSTOLOV, VG
    LITVINOV, YM
    LEIKIN, VN
    BUBLIK, VT
    INORGANIC MATERIALS, 1985, 21 (06) : 905 - 906
  • [36] DIAGNOSTIC STRUCTURES FOR EPITAXIAL THIN SILICON SOLAR CELLS
    Murcia, C. Paola
    Hao, Ruiying
    Creazzo, Tim
    Shreve, Kevin
    Lochtefeld, Anthony
    Curtin, Michael
    Barnett, Allen
    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, : 2204 - 2207
  • [37] STUDY OF DEFECT FORMATION IN SILICON REVERSED EPITAXIAL STRUCTURES
    TALANIN, IE
    STROITELEVA, NI
    LEVINZON, DI
    TOKAREV, VP
    UKRAINSKII FIZICHESKII ZHURNAL, 1993, 38 (10): : 1517 - 1521
  • [38] SILICON EPITAXIAL-GROWTH FOR ADVANCED DEVICE STRUCTURES
    BORLAND, J
    WISE, R
    OKA, Y
    GANGANI, M
    FONG, S
    MATSUMOTO, Y
    SOLID STATE TECHNOLOGY, 1988, 31 (01) : 111 - 119
  • [39] Silicon-Carbide Epitaxial Structures for Betavoltaic Converters
    Ilyin, V. A.
    Afanasyev, A. V.
    Luchinin, V. V.
    Chigirev, D. A.
    Serkov, A. V.
    NANOBIOTECHNOLOGY REPORTS, 2022, 17 (SUPPL 1) : S56 - S60
  • [40] Silicon-Carbide Epitaxial Structures for Betavoltaic Converters
    V. A. Ilyin
    A. V. Afanasyev
    V. V. Luchinin
    D. A. Chigirev
    A. V. Serkov
    Nanobiotechnology Reports, 2022, 17 : S56 - S60
12345