NONDESTRUCTIVE EVALUATION OF THE PARAMETERS OF SILICON EPITAXIAL, STRUCTURES BY LONGWAVE SPECTROSCOPY

被引：0
|
作者：
KOPYLOV, AA
TELPOV, SE
机构：
来源：
RUSSIAN JOURNAL OF NONDESTRUCTIVE TESTING | 1995年 / 31卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Results are presented from theoretical and experimental studies into the development of effective methods of evaluating the parameters of microelectronics materials on the basis of longwave infrared Fourier spectroscopy. Layer thicknesses are determined and estimates are made of the concentrations and mobilities of charge carriers in the substrate. The metrological characteristics of the method are substantiated in experimental studies of silicon structures.
引用
收藏
页码：186 / 189
页数：4
相关论文
共 50 条
  • [1] NONDESTRUCTIVE EVALUATION OF DAMAGE IN COMPOSITE STRUCTURES USING MODAL PARAMETERS
    SANDERS, DR
    KIM, YI
    STUBBS, N
    EXPERIMENTAL MECHANICS, 1992, 32 (03) : 240 - 251
  • [2] Optical Control of the Parameters of Substrates in Silicon-Carbide Epitaxial Structures
    V. V. Luchinin
    M. F. Panov
    M. V. Pavlova
    F. E. Rybka
    Semiconductors, 2022, 56 : 455 - 461
  • [3] Optical Control of the Parameters of Substrates in Silicon-Carbide Epitaxial Structures
    Luchinin, V. V.
    Panov, M. F.
    Pavlova, M. V.
    Rybka, F. E.
    SEMICONDUCTORS, 2022, 56 (13) : 455 - 461
  • [4] NONDESTRUCTIVE METHOD FOR REVEALING STACKING FAULTS IN EPITAXIAL SILICON
    DUDLEY, RH
    JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) : 1360 - &
  • [5] NONDESTRUCTIVE METHOD FOR MEASURING THICKNESSES OF EPITAXIAL SILICON FILMS
    LENIE, CA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (03) : C69 - C69
  • [6] Nondestructive damage evaluation in complex structures using modal strain parameters
    Serna, OR
    Stubbs, N
    SMART SYSTEMS FOR BRIDGES, STRUCTURES, AND HIGHWAYS: SMART STRUCTURES AND MATERIALS 1996, 1996, 2719 : 192 - 200
  • [7] NONDESTRUCTIVE DAMAGE EVALUATION IN COMPLEX STRUCTURES FROM A MINIMUM OF MODAL PARAMETERS
    TOPOLE, KG
    STUBBS, N
    MODAL ANALYSIS-THE INTERNATIONAL JOURNAL OF ANALYTICAL AND EXPERIMENTAL MODAL ANALYSIS, 1995, 10 (02): : 95 - 103
  • [8] Optical nondestructive evaluation for structures
    Fu, GK
    Moosa, AG
    Peng, J
    RESEARCH IN NONDESTRUCTIVE EVALUATION, 2001, 13 (01) : 37 - 59
  • [9] NONDESTRUCTIVE CHARACTERIZATION OF DUAL EPILAYER SILICON STRUCTURES
    ENGELBRECHT, JAA
    WALDEN, M
    DUPNOCK, A
    INFRARED PHYSICS, 1993, 34 (03): : 303 - 309
  • [10] PHOTOACOUSTIC MICROSCOPY OF EPITAXIAL SILICON STRUCTURES
    BULAKH, GI
    BURBELO, RM
    GULYAEV, AL
    KUCHEROV, IY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (05): : 582 - 583
12345