ELECTRICAL AND THERMAL-STABILITY OF AUGENI OHMIC CONTACTS TO GAAS FABRICATED WITH INSITU RF SPUTTER CLEANING

被引：14
|
作者：
CALLEGARI, A
LACEY, D
PAN, ETS
机构：
来源：
SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 05期
关键词：
D O I：
10.1016/0038-1101(86)90073-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：523 / 527
页数：5
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