ANOMALOUS ETCH RATES OF PHOTORESIST WITH ARGON DILUTION OF CF4/O2 PLASMA AFTERGLOWS

被引：4
|
作者：
KORETSKY, MD
REIMER, JA
机构：
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 13期
关键词：
D O I：
10.1063/1.106278
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown that the downstream etching of a photoresist with CF4/O2 mixtures can be enhanced by a factor of at least 2 with addition of argon to the gas mixture. Analysis of the oxygen and fluorine atom densities with gas-phase magnetic resonance downstream of the discharge suggests that argon metastables alter the homogeneous chemistry for fluorine atom production as well as the heterogeneous chemistry of photoresist chain scission.
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页码：1547 / 1549
页数：3
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