ANOMALOUS ETCH RATES OF PHOTORESIST WITH ARGON DILUTION OF CF4/O2 PLASMA AFTERGLOWS

被引：4
|
作者：
KORETSKY, MD
REIMER, JA
机构：
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 13期
关键词：
D O I：
10.1063/1.106278
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown that the downstream etching of a photoresist with CF4/O2 mixtures can be enhanced by a factor of at least 2 with addition of argon to the gas mixture. Analysis of the oxygen and fluorine atom densities with gas-phase magnetic resonance downstream of the discharge suggests that argon metastables alter the homogeneous chemistry for fluorine atom production as well as the heterogeneous chemistry of photoresist chain scission.
引用
收藏
页码：1547 / 1549
页数：3
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