STUDY OF 0.8 EV DEEP LEVEL PHOTO-LUMINESCENCE IN UNDOPED LEC SEMI-INSULATING GAAS

被引：15

|

作者：

KIKUTA, T

TERASHIMA, K

ISHIDA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 08期

关键词：

D O I：

10.1143/JJAP.22.L541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L541 / L543

页数：3

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