共 50 条
- [1] METASTABLE STATE OF THE 0.68-EV EMISSION IN UNDOPED SEMI-INSULATING GAAS [J]. PHYSICAL REVIEW B, 1985, 31 (12): : 8259 - 8262
- [2] PHOTOLUMINESCENCE EXCITATION OF THE 0.77-EV EMISSION IN UNDOPED SEMI-INSULATING GAAS [J]. PHYSICAL REVIEW B, 1984, 29 (04): : 2283 - 2285
- [5] Edge-photoluminescence concentration dependence in semi-insulating undoped GaAs [J]. Semiconductors, 2002, 36 : 167 - 170
- [6] Photoluminescence of electron-hole plasma in semi-insulating undoped GaAs [J]. Semiconductors, 2004, 38 : 1378 - 1380
- [9] COMPENSATION MECHANISM OF UNDOPED SEMI-INSULATING GAAS [J]. CHINESE PHYSICS, 1989, 9 (02): : 508 - 510
- [10] COMPENSATION MECHANISM IN UNDOPED, SEMI-INSULATING GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (10) : 7240 - 7243