INGAAS-GAAS QUANTUM-WELL VERTICAL-CAVITY SURFACE-EMITTING LASER USING MOLECULAR-BEAM EPITAXIAL REGROWTH

被引：26

作者：

LEI, C ^{[1
]}

ROGERS, TJ ^{[1
]}

DEPPE, DG ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV TEXAS,MICROELECTR RES CTR,DEPT ELECT & COMP ENGN,AUSTIN,TX 78712

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 11期

关键词：

D O I：

10.1063/1.104390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented demonstrating a design and fabrication process for the realization of high-efficiency, low-threshold vertical-cavity InGaAs-GaAs quantum well lasers with light emission through the top (epitaxial) surface. Crystal growth is performed using a two-step molecular beam epitaxial growth process to utilize lateral current injection into the device active region. The device structure allows the top surface (emission side) reflector to be optimized (for either high efficiency or low threshold) after crystal growth through the deposition of electron beam evaporated dielectric layers. Maximum continuous-wave output power in excess of 1.2 mW at 300 K, and differential quantum efficiency greater than 25% (3.9 mA threshold) are demonstrated. Low-threshold values of 2.3 mA are measured on devices with increased mirror reflectivity (through the addition of dielectric layers).

引用

页码：1122 / 1124

页数：3

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