PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY

被引:58
|
作者
PARK, RM
MAR, HA
SALANSKY, NM
机构
关键词
D O I
10.1063/1.336212
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1047 / 1049
页数:3
相关论文
共 50 条
  • [31] THE DEPENDENCE ON GROWTH TEMPERATURE OF THE PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE GROWN BY MOCVD
    YOSHIKAWA, A
    MUTO, S
    YAMAGA, S
    KASAI, H
    JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 279 - 284
  • [32] Hydrogenation of undoped and nitrogen-doped CdTe grown by molecular beam epitaxy
    Yu, ZH
    Buczkowski, SL
    Petcu, MC
    Giles, NC
    Myers, TH
    APPLIED PHYSICS LETTERS, 1996, 68 (04) : 529 - 531
  • [33] OPTICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXY-GROWN ZNSE ON GAAS
    KARPINSKA, K
    SUCHOCKI, A
    GODLEWSKI, M
    HOMMEL, D
    ACTA PHYSICA POLONICA A, 1993, 84 (03) : 551 - 554
  • [34] STRUCTURAL-PROPERTIES OF THE ZNSE GAAS SYSTEM GROWN BY MOLECULAR-BEAM EPITAXY
    PETRUZZELLO, J
    GREENBERG, BL
    CAMMACK, DA
    DALBY, R
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) : 2299 - 2303
  • [35] Nitrogen-doped ZnSe(100) films grown by molecular beam epitaxy using a capacitively coupled plasma cell
    Saraie, J
    Yamawaki, K
    Matsumura, N
    Ikehara, A
    JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 334 - 337
  • [36] ENHANCEMENT OF NITROGEN INCORPORATION IN ZNSE GROWN ON MISORIENTED GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    NISHIKAWA, Y
    ISHIKAWA, M
    SAITO, S
    HATAKOSHI, G
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (3A): : L361 - L364
  • [37] ELECTRICAL AND OPTICAL CHARACTERIZATION OF MOLECULAR-BEAM EPITAXY GROWN GA-DOPED ZNSE
    VAZIRI, M
    REIFENBERGER, R
    GUNSHOR, RL
    KOLODZIEJSKI, LA
    VENKATESAN, S
    PIERRET, RF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 253 - 258
  • [38] THE INFLUENCE OF NITROGEN ON THE P-CONDUCTIVITY IN ZNSE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    HOFFMANN, A
    LUMMER, B
    ECKEY, L
    KUTZER, V
    FRICKE, C
    HEITZ, R
    BROSER, I
    KURTZ, E
    JOBST, B
    HOMMEL, D
    JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 1073 - 1074
  • [39] ELECTRICAL CHARACTERIZATION OF GALLIUM PLANAR-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
    SHIBLI, SM
    TAMARGO, MC
    DEMIGUEL, JL
    SKROMME, BJ
    NAHORY, RE
    FARRELL, HH
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) : 4295 - 4300
  • [40] OXYGEN-DOPED AND NITROGEN-DOPED SILICON FILMS PREPARED BY MOLECULAR-BEAM EPITAXY
    TABE, M
    TAKAHASHI, M
    ICHIMORI, T
    SAKAKIBARA, Y
    THIN SOLID FILMS, 1990, 184 : 373 - 377