SPUTTERING-CONTROLLED ION MIXING OF AU/GAAS

被引:8
|
作者
BARCZ, AJ
DOMANSKI, M
JAGIELSKI, J
KAMINSKA, E
机构
关键词
D O I
10.1016/S0168-583X(87)80155-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:773 / 776
页数:4
相关论文
共 50 条
  • [41] Ion-beam-sputtering/mixing deposition of calcium phosphate coatings. I. Effects of ion-mixing beams
    Wang, CX
    Chen, ZQ
    Wang, M
    Liu, ZY
    Wang, PL
    JOURNAL OF BIOMEDICAL MATERIALS RESEARCH, 2001, 55 (04): : 587 - 595
  • [42] Molecular dynamics and Monte-Carlo simulation of sputtering and mixing by ion irradiation
    Aoki, T
    Chiba, S
    Matsuo, J
    Yamada, I
    Biersack, JP
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 180 : 312 - 316
  • [43] Formation of Cr-Zr gradient layer by magnetron sputtering and ion mixing
    Kashkarov, Egor B.
    Sidelev, Dmitrii, V
    Rombaeva, Maya R.
    Kudiiarov, Viktor N.
    Lomygin, Anton
    INTERNATIONAL CONFERENCE ON MODERN TRENDS IN MANUFACTURING TECHNOLOGIES AND EQUIPMENT: MECHANICAL ENGINEERING AND MATERIALS SCIENCE (ICMTMTE 2019), 2019, 298
  • [44] PREFERENTIAL SPUTTERING OF GAAS
    MALHERBE, JB
    BARNARD, WO
    STRYDOM, ILR
    LOUW, CW
    SURFACE AND INTERFACE ANALYSIS, 1992, 18 (07) : 491 - 495
  • [45] DEPTH PROFILING AND ION-INDUCED MIXING OF ALAS MONOLAYERS IN GAAS
    VAJO, JJ
    CIRLIN, EH
    WILSON, RG
    HASENBERG, TC
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (01) : 90 - 92
  • [46] Enhanced epitaxial growth on substrates modified by ion sputtering: Ge on GaAs(110)
    Brake, J
    Wang, XS
    Pechman, RJ
    Weaver, JH
    PHYSICAL REVIEW B, 1996, 53 (16): : 11170 - 11175
  • [47] Growth of GaAs quantum dots on Si substrate with artificial topography by ion sputtering
    Li, G
    Zhang, J
    Yang, L
    Zhang, Y
    Zhang, L
    SCRIPTA MATERIALIA, 2001, 44 (8-9) : 1945 - 1948
  • [48] EPITAXIAL FE FILMS ON (100)GAAS SUBSTRATES BY ION-BEAM SPUTTERING
    TUSTISON, RW
    VARITIMOS, T
    VANHOOK, J
    SCHLOEMANN, EF
    APPLIED PHYSICS LETTERS, 1987, 51 (04) : 285 - 287
  • [49] ION SPUTTERING OF GAAS(110) - FROM INDIVIDUAL BOMBARDMENT EVENTS TO MULTILAYER REMOVAL
    WANG, XS
    PECHMAN, RJ
    WEAVER, JH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (05): : 2031 - 2040
  • [50] ION-BEAM MIXING OF GAAS WITH FILMS OF AL, SI, AND THEIR NITRIDES
    FASTOW, R
    BRENER, R
    KALISH, R
    EIZENBERG, M
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2586 - 2590