PREFERENTIAL SPUTTERING OF GAAS

被引：39

作者：

MALHERBE, JB ^{[1
]}

BARNARD, WO ^{[1
]}

STRYDOM, ILR ^{[1
]}

LOUW, CW ^{[1
]}

机构：

[1] CSIR,DIV MAT SCI & TECHNOL,PRETORIA 0002,SOUTH AFRICA

来源：

SURFACE AND INTERFACE ANALYSIS | 1992年 / 18卷 / 07期

关键词：

D O I：

10.1002/sia.740180706

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Low-energy (0.65-3 keV) Ar+ ions were used to sputter (100) and (110) GaAs. Preferential sputtering effects were investigated by means of Auger electron spectroscopy. The results show that the equilibrium sputtered surface composition on both surfaces is depleted in As. No sample orientation effects were observed. However, the equilibrium compositions of the sputtered surfaces become increasingly Ga-enriched by increasing the energy of the bombarding ions. The sputtered surface composition is independent of the angle of incidence of the bombarding Ar+ ions. For the different experimental conditions, the mean final surface compositions varied from GaAs0.89 to GaAs0.69. These values are in broad agreement with other reported AES studies. This agreement is probably due to the fact that the sputtered surface composition is independent of the angle of incidence of the ions on the GaAs sample.

引用

页码：491 / 495

页数：5

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