SIO2 NATIVE-OXIDE DOUBLE-GATE INSB MOSFETS

被引：4
|
作者：
TAKAHASHI, T
SUGIURA, O
WATANABE, I
MATSUMURA, M
机构：
来源：
ELECTRONICS LETTERS | 1985年 / 21卷 / 12期
关键词：
D O I：
10.1049/el:19850385
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：545 / 547
页数：3
相关论文
共 50 条
  • [31] A unified charge model for symmetric double-gate and surrounding-gate MOSFETs
    Lu, Huaxin
    Yu, Bo
    Taur, Yuan
    SOLID-STATE ELECTRONICS, 2008, 52 (01) : 67 - 72
  • [32] Transport properties of double-gate SiO2-Si-SiO2 quantum well
    Prunnila, M
    Ahopelto, J
    Sakaki, H
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (06): : 970 - 976
  • [33] Numerical modeling on asymmetrical double-gate MOSFETs and TiN-gate FinFETs
    Kim, Han-Geon
    Cho, Sang-Young
    Kim, Young-Kyu
    Won, Taeyoung
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (03) : 1506 - 1510
  • [34] An analytical subthreshold current model for ballistic double-gate MOSFETs
    Autran, JL
    Munteanu, D
    Tintori, O
    Aubert, M
    Decarre, E
    NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS, 2004, : 171 - 174
  • [35] Comparison of Double-Gate MOSFETs and FinFETs with Monte Carlo Simulation
    Gulzar A. Kathawala
    Mohamed Mohamed
    Umberto Ravaioli
    Journal of Computational Electronics, 2003, 2 : 85 - 89
  • [36] Explicit quantum potential and charge model for double-gate MOSFETs
    Chaves, Ferney
    Jimenez, David
    Sune, Jordi
    SOLID-STATE ELECTRONICS, 2010, 54 (05) : 530 - 535
  • [37] Extraordinarily high drive currents in asymmetrical double-gate MOSFETs
    Fossum, JG
    Ren, ZB
    Kim, K
    Lundstrom, M
    SUPERLATTICES AND MICROSTRUCTURES, 2000, 28 (5-6) : 525 - 530
  • [38] Multiband simulation of quantum transport in nanoscale double-gate MOSFETs
    Iwata, Hideyuki
    Matsuda, Toshihiro
    Ohzone, Takashi
    SOLID-STATE ELECTRONICS, 2009, 53 (10) : 1130 - 1134
  • [39] First-principles modeling of double-gate UTSOI MOSFETs
    Evans, MH
    Caussanel, M
    Schrimpf, RD
    Pantelides, ST
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST, 2005, : 611 - 614
  • [40] Comparison of Double-Gate MOSFETs and FinFETs with Monte Carlo Simulation
    Kathawala, Gulzar A.
    Mohamed, Mohamed
    Ravaioli, Umberto
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2003, 2 (2-4) : 85 - 89
12345