SIO2 NATIVE-OXIDE DOUBLE-GATE INSB MOSFETS

被引：4
|
作者：
TAKAHASHI, T
SUGIURA, O
WATANABE, I
MATSUMURA, M
机构：
来源：
ELECTRONICS LETTERS | 1985年 / 21卷 / 12期
关键词：
D O I：
10.1049/el:19850385
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：545 / 547
页数：3
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