ELECTRICAL AND OPTICAL-PROPERTIES OF INP GROWN BY MOLECULAR-BEAM EPITAXY USING CRACKED PHOSPHINE

被引：23
|
作者：
CHOW, R
CHAI, YG
机构：
来源：
APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 04期
关键词：
D O I：
10.1063/1.93947
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：383 / 385
页数：3
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