FABRICATION OF HIGH-QUALITY NB/AL-ALOX-AL/NB JUNCTIONS BY A SIMPLE PROCESS

被引：4

作者：

MIZUTANI, N ^{[1
]}

UEHARA, G ^{[1
]}

YAMASAKI, S ^{[1
]}

ADACHI, A ^{[1
]}

TAKADA, Y ^{[1
]}

KADO, H ^{[1
]}

机构：

[1] ELECTROTECH LAB, TSUKUBA, IBARAKI 305, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 11A期

关键词：

NB/AL ALOX AL/NB JUNCTION; EDGE JUNCTION; LEAKAGE CURRENT; QUASI-PARTICLE TUNNEL CURRENT; SMALL JUNCTION;

D O I：

10.1143/JJAP.33.L1515

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated Nb/Al-AlOx-Al/Nb junctions that have extremely low leakage currents by a simple process using only two mask levels. Reducing the thickness of the Al layer under the AlOx improved the quality. For a 20 mu m(2) junction, the current at 0.5 mV at 0.5 K was 4 or more orders of magnitude lower than that at 4.2 K. For 0.70 mu m(2) junctions, the current at 0.5 mV below 1.5 K was 3 or more orders of magnitude lower than that at 4.2 K. We have also fabricated ultra small junctions of high quality. These high-quality junctions can be fabricated by a simple process, hence they are appropriate for various applications.

引用

页码：L1515 / L1518

页数：4

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