1.5V HIGH-SPEED LOW-POWER CMOS CURRENT SENSE AMPLIFIER

被引：4
|
作者：
YEO, KS
ROFAIL, SS
机构：
[1] Division of Circuits and Systems, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 23期
关键词：
VLSI; CURRENT-MODE CIRCUITS; CMOS MEMORY CIRCUITS;
D O I：
10.1049/el:19951351
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 1.5V high speed low power current sense amplifier for CMOS SRAMs is described. The design is based on the current mode approach and it can be fabricated using a standard CMOS process. The sensing speed is independent of the bit and data line capacitances and no equalisation is needed during the read access. HSPICE simulations have shown that the proposed circuit outperforms the recently reported circuits in terms of speed and average power dissipation.
引用
收藏
页码：1991 / 1993
页数：3
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