A NEW SILICON-ON-INSULATOR STRUCTURE USING A SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH ON POROUS SILICON

被引：49
|
作者：
KONAKA, S
TABE, M
SAKAI, T
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 01期
关键词：
D O I：
10.1063/1.93298
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：86 / 88
页数：3
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