TSEE FROM ION-IMPLANTED LIF CRYSTALS

被引:4
|
作者
KAWANISHI, M [1 ]
KAKIAGE, T [1 ]
KIDO, Y [1 ]
ODA, K [1 ]
YAMAMOTO, T [1 ]
机构
[1] TOYOTA CENT RES & DEV LABS INC,NAGAKUTE,AICHI 48011,JAPAN
关键词
D O I
10.7567/JJAPS.24S4.225
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:225 / 228
页数:4
相关论文
共 50 条
  • [31] ANOMALOUS DIFFUSION EFFECTS IN ION-IMPLANTED MGO SINGLE-CRYSTALS
    CANUT, B
    DUPIN, JP
    GEA, L
    RAMOS, SMM
    THEVENARD, P
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 (pt 2): : 1211 - 1214
  • [32] Rapid determination of total disorientation directions in ion-implanted GaAs crystals
    Fahrner, W.R.
    Hermann, K.
    Physics, Chemistry, and Mechanics of Surfaces, 1994, 8 (07):
  • [33] Photorefractive properties of ion-implanted waveguides in strontium barium niobate crystals
    D. Kip
    B. Kemper
    I. Nee
    R. Pankrath
    P. Moretti
    Applied Physics B, 1997, 65 : 511 - 516
  • [34] PHOTOLUMINESCENCE OF ION-IMPLANTED ZNTE
    WOOI, WR
    MEESE, JM
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 319 - 319
  • [35] PROPERTIES OF ION-IMPLANTED GLASSES
    MAZZOLDI, P
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 1089 - 1098
  • [36] Annealing of ion-implanted GaN
    Burchard, A.
    Haller, E.E.
    Stötzler, A.
    Weissenborn, R.
    Deicher, M.
    Physica B: Condensed Matter, 1999, 273 : 96 - 100
  • [37] PHOTOLUMINESCENCE OF ION-IMPLANTED PHOSPHORS
    VIRDI, GS
    SINGH, N
    NATH, N
    PRAMANA, 1988, 31 (04) : 309 - 312
  • [38] ION-IMPLANTED GRAPHITIC CARBONS
    KENNY, MJ
    POLLOCK, JTA
    WIELUNSKI, LS
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 704 - 707
  • [39] VOIDS IN ION-IMPLANTED SILICON
    ROMANOV, SI
    SMIRNOV, LS
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (1-2): : 121 - 126
  • [40] OXIDATION OF ION-IMPLANTED METALS
    GALERIE, A
    CAILLET, M
    PONS, M
    MATERIALS SCIENCE AND ENGINEERING, 1985, 69 (02): : 329 - 340