ION-IMPLANTED GRAPHITIC CARBONS

被引:16
|
作者
KENNY, MJ
POLLOCK, JTA
WIELUNSKI, LS
机构
关键词
D O I
10.1016/0168-583X(89)90879-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:704 / 707
页数:4
相关论文
共 50 条
  • [1] PHOTOLUMINESCENCE OF ION-IMPLANTED ZNTE
    WOOI, WR
    MEESE, JM
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 319 - 319
  • [2] PROPERTIES OF ION-IMPLANTED GLASSES
    MAZZOLDI, P
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 1089 - 1098
  • [3] Annealing of ion-implanted GaN
    Burchard, A.
    Haller, E.E.
    Stötzler, A.
    Weissenborn, R.
    Deicher, M.
    Physica B: Condensed Matter, 1999, 273 : 96 - 100
  • [4] PHOTOLUMINESCENCE OF ION-IMPLANTED PHOSPHORS
    VIRDI, GS
    SINGH, N
    NATH, N
    PRAMANA, 1988, 31 (04) : 309 - 312
  • [5] VOIDS IN ION-IMPLANTED SILICON
    ROMANOV, SI
    SMIRNOV, LS
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (1-2): : 121 - 126
  • [6] OXIDATION OF ION-IMPLANTED METALS
    GALERIE, A
    CAILLET, M
    PONS, M
    MATERIALS SCIENCE AND ENGINEERING, 1985, 69 (02): : 329 - 340
  • [7] ION-IMPLANTED ARSENIC IN SILICON
    LARSEN, AN
    CHRISTENSEN, B
    CHRISTENSEN, PH
    SHIRYAEV, SY
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 697 - 701
  • [8] CATHODOLUMINESCENCE OF ION-IMPLANTED ZNS
    JOHNSON, SL
    HENGEHOL.RL
    DOBBS, BC
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (07): : 886 - 886
  • [9] PROPERTIES OF ION-IMPLANTED ZNSE
    SANTIAGO, JJ
    SHIN, BK
    EHRET, J
    WOODY, WR
    CARRA, WM
    PARK, YS
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 381 - 381
  • [10] ION-IMPLANTED SE IN GAAS
    LIDOW, A
    GIBBONS, JF
    DELINE, VR
    EVANS, CA
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4130 - 4138