Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon

被引：12

作者：

Basaran, E ^{[1
]}

Parry, CP ^{[1
]}

Kubiak, RA ^{[1
]}

Whall, TE ^{[1
]}

Parker, EHC ^{[1
]}

机构：

[1] UNIV WARWICK,DEPT PHYS,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 157卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00397-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The electrochemical capacitance-voltage profiling (eCV) technique is employed to measure the carrier concentration in heavily boron-doped Si, grown by molecular beam epitaxy. Secondary ion mass spectrometry (SIMS) and Hall measurements are also carried out for comparison. The carrier concentrations obtained by eCV match well with the Hall measurements. The results indicate that the eCV technique is capable of probing carrier concentrations well into the 10(20) cm(-3) range with a good precision. The relative merits of the eCV and SIMS depth profiling are shown to be useful in the cm analysis of boron incorporation behaviour at doping levels above solubility limits.

引用

页码：109 / 112

页数：4

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