Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon

被引：12

作者：

Basaran, E ^{[1
]}

Parry, CP ^{[1
]}

Kubiak, RA ^{[1
]}

Whall, TE ^{[1
]}

Parker, EHC ^{[1
]}

机构：

[1] UNIV WARWICK,DEPT PHYS,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 157卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00397-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The electrochemical capacitance-voltage profiling (eCV) technique is employed to measure the carrier concentration in heavily boron-doped Si, grown by molecular beam epitaxy. Secondary ion mass spectrometry (SIMS) and Hall measurements are also carried out for comparison. The carrier concentrations obtained by eCV match well with the Hall measurements. The results indicate that the eCV technique is capable of probing carrier concentrations well into the 10(20) cm(-3) range with a good precision. The relative merits of the eCV and SIMS depth profiling are shown to be useful in the cm analysis of boron incorporation behaviour at doping levels above solubility limits.

引用

页码：109 / 112

页数：4

共 50 条

[11] Capacitance-Voltage Characterization of In-situ Boron Doped Silicon Quantum Dot in Silicon Dioxide
Zhang, Tian
Wurfl, Ivan Perez
Puthen-Veettil, Binesh
Wu, Lingfeng
Jia, Xuguang
Lin, Ziyun
Yang, Chien-Jen
Conibeer, Gavin
[J]. 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2014, : 1115 - 1118
[12] Selective Epitaxial Growth of Heavily Boron-Doped Silicon with Uniform Doping Depth Profile
Zhu, Z.
Cong, Z.
Ramachandran, B.
[J]. SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 50 (09): : 999 - 1006
[13] Investigation of Ion-Implanted Photosensitive Silicon Structures by Electrochemical Capacitance-Voltage Profiling
Yakovlev, G. E.
Frolov, D. S.
Zubkova, A. V.
Levina, E. E.
Zubkov, V. I.
Solomonov, A. V.
Sterlyadkin, O. K.
Sorokin, S. A.
[J]. SEMICONDUCTORS, 2016, 50 (03) : 320 - 325
[14] Technique for the Electrochemical Capacitance–Voltage Profiling of Heavily Doped Structures with a Sharp Doping Profile
D. S. Frolov
G. E. Yakovlev
V. I. Zubkov
[J]. Semiconductors, 2019, 53 : 268 - 272
[15] Anneal treatment studies of heavily boron-doped silicon
Bruce, DM
[J]. MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY III, 1997, 3223 : 270 - 275
[16] Heavily boron-doped silicon single crystal growth: Boron segregation
Taishi, T
Huang, XM
Kubota, M
Kajigaya, T
Fukami, T
Hoshikawa, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (3A): : L223 - L225
[17] Enhanced diffusion of boron by oxygen precipitation in heavily boron-doped silicon
Torigoe, Kazuhisa
Ono, Toshiaki
[J]. JOURNAL OF APPLIED PHYSICS, 2017, 121 (21)
[18] ELECTROCHEMICAL CAPACITANCE-VOLTAGE PROFILING OF N-TYPE ZNSE
WANG, SY
SIMPSON, J
PRIOR, KA
CAVENETT, BC
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (11) : 5311 - 5317
[19] CAPACITANCE SPECTROSCOPY OF BORON-DOPED SILICON-CARBIDE
BALLANDOVICH, VS
MOKHOV, EN
[J]. SEMICONDUCTORS, 1995, 29 (02) : 187 - 190
[20] Electrochemical capacitance-voltage profiling of nonuniformly doped GaAs heterostructures with SQWs and MQWs for LED applications
Yakovlev, George
Zubkov, Vasily
Solomnikova, Anna
Derevianko, Oleg
[J]. TURKISH JOURNAL OF PHYSICS, 2018, 42 (04): : 433 - 442

← 1 2 3 4 5 →