PLASMA-ETCHING OF POLYSILICON NITRIDE POLYSILICON SANDWICH STRUCTURE FOR SENSOR APPLICATIONS

被引：0
|
作者：
LI, YX
LAROS, M
SARRO, PM
FRENCH, PJ
WOLFFENBUTTEL, RF
机构：
[1] Department of Electrical Engineering, Electronic Instrumentation Laboratory
[2] Delft Institute for Microelectronics and Submicron Technology (DIMES), Delft University of Technology, 2628 CD Delft
来源：
MICROELECTRONIC ENGINEERING | 1993年 / 21卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(93)90087-L
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An in situ two step process has been developed for plasma etching of poly-Si/nitride/poly-Si sandwich structures for a surface micromachined tactile sensor. Compared with the one-step process, the two-step process provides the desired etch selectivity, better uniformity and easier control of the process.
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页码：341 / 344
页数：4
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