AMMONIUM FLUORIDE DEPOSITION DURING PLASMA-ETCHING OF SILICON-NITRIDE

被引：11
|
作者：
BREWER, JA [1 ]
MILLER, GW [1 ]
机构：
[1] NCR CORP,DIV MICROELECTR,FT COLLINS,CO 80525
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 04期
关键词：
D O I：
10.1116/1.582714
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：932 / 934
页数：3
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