共 50 条
- [41] ORIGIN OF CONDENSER PHOTO-EMF IN SEMICONDUCTORS AND OF PHOTOINDUCED CHANGE IN CONTACT POTENTIAL PHYSICA STATUS SOLIDI, 1966, 14 (01): : 135 - &
- [42] ELECTROABSORPTION OF GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1635 - 1638
- [44] ELECTROABSORPTION OF GALLIUM-ARSENIDE SOVIET PHYSICS SOLID STATE,USSR, 1972, 13 (10): : 2488 - +
- [50] A STUDY OF GALLIUM-ARSENIDE AND ALUMINUM GALLIUM-ARSENIDE REACTIVE ION ETCHING PARAMETERS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1604 - 1605