SILICON ION-IMPLANTATION INTO SEMI-INSULATING FE-DOPED INP GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

被引：0
|
作者：
MACRANDER, AT [1 ]
JOHNSTON, WD [1 ]
LONG, J [1 ]
SCHWARTZ, B [1 ]
SINGH, S [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C406 / C406
页数：1
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