Photocurrent contrast in semi-insulating Fe-doped InP

被引：8
|
作者：
Alvarez, A
Avella, M
Jimenez, J
Gonzalez, MA
Fornari, R
机构：
[1] ESCUELA TECN SUPER INGN IND,E-47011 VALLADOLID,SPAIN
[2] CNR,INST MASPEC,I-43100 PARMA,ITALY
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1996年 / 11卷 / 06期
关键词：
D O I：
10.1088/0268-1242/11/6/016
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The relation between photocurrent and iron distribution in as-grown bulk InP is studied on the basis of a theoretical model that considers the electronic transitions involving Fe2+((5)E) and Fe3+ electronic levels. The photocurrent contrast is thus analysed in terms of fluctuations in [Fe2+] and [Fe3+]. When studying the homogeneity of Fe-doped semi-insulating InP wafers by means of scanning extrinsic photocurrent microscopy, it is seen that inhomogeneity is mainly controlled by fluctuations of the neutral iron concentration [Fe3+].
引用
收藏
页码：941 / 946
页数：6
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