Characteristics of semi-insulating, Fe-doped GaN substrates

被引：104
|
作者：
Vaudo, RP [1 ]
Xu, XP [1 ]
Salant, A [1 ]
Malcarne, J [1 ]
Brandes, GR [1 ]
机构：
[1] ATMI Inc, Danbury, CT 06810 USA
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2003年 / 200卷 / 01期
关键词：
D O I：
10.1002/pssa.200303273
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Semi-insulating freestanding GaN substrates were produced by hydride vapor phase epitaxy using intentionally introduced iron impurity atoms to compensate residual donors in GaN. Variable temperature resistivity measurements determined the resistivity of an iron-doped GaN sample to be -3 x 10(5) Omega cm at 250 degreesC. The activation energy of the carrier was 0.51 eV and room temperature resistivity was determined to be similar to2 x 10(9) Omega cm at room temperature by linear fitting and extrapolation to room temperature. Near-infrared photoluminescence at 1.6 K exhibited sharp emission at 1.3 eV, associated with the T-4(1) (G) --> (6)A(1)(S) internal transition of the Fe3+ charge state. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：18 / 21
页数：4
相关论文
共 50 条
  • [1] Growth of Fe-doped thick GaN layers for preparation of semi-insulating GaN substrates
    Kumagai, Y
    Takemoto, K
    Murakami, H
    Koukitu, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (33-36): : L1072 - L1075
  • [2] Characterization of resistivity and breakdown field in Fe-doped semi-insulating GaN substrates
    Aoai, A.
    Suzuki, K.
    Asubar, J. T.
    Tokuda, H.
    Nojima, K.
    Ishibashi, N.
    Okada, N.
    Tadatomo, K.
    Kuzuhara, M.
    [J]. 2018 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2018,
  • [3] Charge transfer in semi-insulating Fe-doped GaN
    Dashdorj, J.
    Zvanut, M. E.
    Harrison, J. G.
    Udwary, K.
    Paskova, T.
    [J]. JOURNAL OF APPLIED PHYSICS, 2012, 112 (01)
  • [4] Properties of Fe-doped semi-insulating GaN structures
    Polyakov, AY
    Smirnov, NB
    Govorkov, AV
    Pearton, SJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (01): : 120 - 125
  • [5] InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates
    Wu, M.
    Leach, J. H.
    Ni, X.
    Li, X.
    Xie, J.
    Dogan, S.
    Ozgur, U.
    Morkoc, H.
    Paskova, T.
    Preble, E.
    Evans, K. R.
    Lu, Chang-Zhi
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (05): : 908 - 911
  • [6] Properties of Fe-doped semi-insulating GaN substrates for high-frequency device fabrication
    Freitas, J. A., Jr.
    Tischler, J. G.
    Kim, J.-H.
    Kumagai, Y.
    Koukitu, A.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2007, 305 (02) : 403 - 407
  • [7] Electrical and optical properties of Fe-doped semi-insulating GaN templates
    Polyakov, AY
    Smirnov, NB
    Govorkov, AV
    Pearton, SJ
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (16) : 3314 - 3316
  • [8] SEMI-INSULATING PROPERTIES OF FE-DOPED INP
    MIZUNO, O
    WATANABE, H
    [J]. ELECTRONICS LETTERS, 1975, 11 (05) : 118 - 119
  • [9] Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy
    Dumcenco, D. O.
    Levcenco, S.
    Huang, Y. S.
    Reynolds, C. L., Jr.
    Reynolds, J. G.
    Tiong, K. K.
    Paskova, T.
    Evans, K. R.
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 109 (12)
  • [10] Fe-doped semi-insulating GaN substrates prepared by hydride vapor-phase epitaxy using GaAs starting substrates
    Kumagai, Yoshinao
    Satoh, Fumitaka
    Togashi, Rie
    Murakami, Hisashi
    Takemoto, Kikurou
    Iihara, Junji
    Yamaguchi, Koji
    Koukitu, Akinori
    [J]. JOURNAL OF CRYSTAL GROWTH, 2006, 296 (01) : 11 - 14
12345