PRECIPITATION IN FE-DOPED SEMI-INSULATING INP EPITAXIAL LAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD)

被引：0

作者：

CHU, SNG ^{[1
]}

NAKAHARA, S ^{[1
]}

LONG, JA ^{[1
]}

RIGGS, VG ^{[1
]}

JOHNSTON, WD ^{[1
]}

机构：

[1] AT&T BELL LABS, MURRAY HILL, NJ USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C403 / C403

页数：1

共 50 条

[1] PRECIPITATION IN FE-DOPED SEMI-INSULATING INP EPITAXIAL LAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD)
CHU, SNG
NAKAHARA, S
LONG, JA
RIGGS, VG
JOHNSTON, WD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2795 - 2798
[2] ELECTRICAL CHARACTERIZATION OF FE-DOPED SEMI-INSULATING INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
MACRANDER, AT
LONG, JA
RIGGS, VG
BLOEMEKE, AF
JOHNSTON, WD
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1297 - 1298
[3] GROWTH OF FE-DOPED SEMI-INSULATING INP BY MOCVD
LONG, JA
RIGGS, VG
JOHNSTON, WD
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) : 10 - 14
[4] SILICON ION-IMPLANTATION INTO SEMI-INSULATING FE-DOPED INP GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
MACRANDER, AT
JOHNSTON, WD
LONG, J
SCHWARTZ, B
SINGH, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : C406 - C406
[5] FE INCORPORATION AND PRECIPITATION IN SEMIINSULATING FE-DOPED INP GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
CHU, SNG
LOGAN, RA
HA, NT
NAKAHARA, S
KARLICEK, RF
GRENKO, JA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (01) : 242 - 246
[6] Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition
Heikman, S
Keller, S
DenBaars, SP
Mishra, UK
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (03) : 439 - 441
[7] SEMI-INSULATING FE-DOPED INP LAYERS GROWN BY MOVPE
SPEIER, P
WIEDEMANN, P
KUEBART, W
GROSSKOPF, H
GROTJAHN, F
SCHULER, F
TEGUDE, FJ
WUNSTEL, K
[J]. SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 295 - 300
[8] ACTIVATION RATIO OF FE IN FE-DOPED SEMIINSULATING INP EPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY AND METALORGANIC CHEMICAL VAPOR-DEPOSITION
SUGAWARA, M
KONDO, M
NAKAI, K
YAMAGUCHI, A
NAKAJIMA, K
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1432 - 1434
[9] Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor deposition
Dadgar, A
Stenzel, O
Köhne, L
Näser, A
Strassburg, M
Stolz, W
Bimberg, D
Schumann, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) : 69 - 73
[10] SEMI-INSULATING PROPERTIES OF FE-DOPED INP
MIZUNO, O
WATANABE, H
[J]. ELECTRONICS LETTERS, 1975, 11 (05) : 118 - 119

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