NEW METHOD FOR SOFT-ERROR MAPPING IN DYNAMIC RANDOM-ACCESS MEMORY USING NUCLEAR MICROPROBE

被引：10
|
作者：
SAYAMA, H
HARA, S
KIMURA, H
OHNO, Y
SATOH, S
TAKAI, M
机构：
[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN
[2] MITSUBISHI ELECTR CO,LSI RES & DEV LAB,ITAMI,HYOGO 664,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 12B期
关键词：
DYNAMIC RANDOM ACCESS MEMORY; SOFT ERROR; SINGLE EVENT UPSET; NUCLEAR MICROPROBE; PROTON MICROPROBE; SOFT-ERROR MAPPING; SECONDARY ELECTRON MAPPING;
D O I：
10.1143/JJAP.31.4541
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Locally sensitive positions against soft error in a dynamic random access memory (DRAM) have, for the first time, been investigated using a proton microprobe. Both soft-error (bit-state) mapping and secondary electron mapping images of the investigated area could locally identify sensitive positions against soft error. Two kinds of error modes in a DRAM (i.e., cell mode and bit-line mode) could be directly monitored.
引用
收藏
页码：4541 / 4544
页数：4
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