AC BEHAVIOR OF VACUUM-DEPOSITED PRASEODYMIUM OXIDE-FILMS

被引：41

作者：

GOSWAMI, A ^{[1
]}

GOSWAMI, AP ^{[1
]}

机构：

[1] NATL CHEM LAB,POONA,INDIA

来源：

THIN SOLID FILMS | 1974年 / 20卷 / 01期

关键词：

D O I：

10.1016/0040-6090(74)90049-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：S3 / S6

页数：4

共 50 条

[1] DIELECTRIC-PROPERTIES OF VACUUM-DEPOSITED CERIUM OXIDE-FILMS
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[J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 1984, 3 (07) : 600 - 604
[2] DIELECTRIC-PROPERTIES OF VACUUM-DEPOSITED BISMUTH OXIDE-FILMS
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[4] DIELECTRIC AND STRUCTURAL-PROPERTIES OF VACUUM-DEPOSITED NIOBIUM OXIDE-FILMS
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[J]. INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1974, 12 (01) : 26 - 31
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[7] CHEMICAL-STABILITY IN HYDROGEN OF OXIDE-FILMS ON MASSIVE AND VACUUM-DEPOSITED NICKEL AND COPPER SPECIMENS
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[8] ANNEALING BEHAVIOUR IN VACUUM-DEPOSITED FILMS OF SILICON OXIDE
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