共 50 条
- [34] EFFECTIVE BASE RESISTANCE OF BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2503 - 2505
- [35] SELECTIVE EPITAXY BASE FOR BIPOLAR-TRANSISTORS [J]. JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 367 - 370
- [36] MEASUREMENT OF BASE RESISTANCE OF BIPOLAR-TRANSISTORS [J]. ELECTRONICS LETTERS, 1975, 11 (12) : 249 - 250
- [37] GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH ABRUPT EMITTER BASE INTERFACE FOR BALLISTIC OPERATION [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 431 - 438
- [38] HIGH-FREQUENCY CHARACTERISTICS OF BALLISTIC BIPOLAR HETEROTRANSISTORS [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1984, 29 (11): : 2250 - 2256