HIGH-FREQUENCY PROPERTIES OF BALLISTIC BIPOLAR-TRANSISTORS WITH AN INHOMOGENEOUS BASE

被引:0
|
作者
RYZHII, VI
FEDIRKO, VA
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1984年 / 18卷 / 06期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:691 / 692
页数:2
相关论文
共 50 条
  • [31] HIGH-FREQUENCY PERFORMANCE OF LATTICE-STRAINED HETEROJUNCTION GALNAS/GAAS BIPOLAR-TRANSISTORS
    RAMBERG, LP
    CHEN, YK
    ENQUIST, PM
    NAJJAR, FE
    EASTMAN, LF
    KAVANAGH, KL
    [J]. ELECTRONICS LETTERS, 1986, 22 (21) : 1123 - 1125
  • [32] HIGH-FREQUENCY PERFORMANCE OF ALGAAS/INGAAS/GAAS STRAINED LAYER HETEROJUNCTION BIPOLAR-TRANSISTORS
    SULLIVAN, GJ
    ASBECK, PM
    CHANG, MF
    MILLER, DL
    WANG, KC
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1845 - 1846
  • [33] HIGH-FREQUENCY INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS ON A SI SUBSTRATE
    MATSUOKA, Y
    KURISHIMA, K
    MAKIMOTO, T
    [J]. IEEE ELECTRON DEVICE LETTERS, 1993, 14 (07) : 357 - 359
  • [34] EFFECTIVE BASE RESISTANCE OF BIPOLAR-TRANSISTORS
    LARY, JE
    ANDERSON, RL
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2503 - 2505
  • [35] SELECTIVE EPITAXY BASE FOR BIPOLAR-TRANSISTORS
    BURGHARTZ, JN
    GINSBERG, BJ
    MADER, SR
    CHEN, TC
    HARAME, DL
    [J]. JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 367 - 370
  • [36] MEASUREMENT OF BASE RESISTANCE OF BIPOLAR-TRANSISTORS
    MEIJER, GCM
    DERONDE, HJA
    [J]. ELECTRONICS LETTERS, 1975, 11 (12) : 249 - 250
  • [37] GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH ABRUPT EMITTER BASE INTERFACE FOR BALLISTIC OPERATION
    ANKRI, D
    SCHAFF, W
    WOOD, CEC
    EASTMAN, LF
    WOODARD, DW
    RATHBUN, L
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 431 - 438
  • [38] HIGH-FREQUENCY CHARACTERISTICS OF BALLISTIC BIPOLAR HETEROTRANSISTORS
    RYZHY, VI
    FEDIRKO, VA
    [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1984, 29 (11): : 2250 - 2256
  • [39] HIGH-LEVEL INJECTION INFLUENCE ON THE HIGH-FREQUENCY PERFORMANCE OF POLYCRYSTALLINE SILICON EMITTER BIPOLAR-TRANSISTORS
    CHYAN, YF
    SZE, SM
    CHANG, CY
    CHIUEH, HM
    REIF, R
    [J]. SOLID-STATE ELECTRONICS, 1994, 37 (08) : 1531 - 1536
  • [40] EVALUATION OF THE HIGH-FREQUENCY SMALL-SIGNAL PERFORMANCE OF BIPOLAR-TRANSISTORS UNDER AVALANCHE CONDITIONS
    HEBERT, F
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (04) : 939 - 940