HIGH-FREQUENCY PROPERTIES OF BALLISTIC BIPOLAR-TRANSISTORS WITH AN INHOMOGENEOUS BASE

被引：0

|

作者：

RYZHII, VI

FEDIRKO, VA

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1984年 / 18卷 / 06期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：691 / 692

页数：2

相关论文

共 50 条

[21] AN EVALUATION OF SI AND SIGE BASE BIPOLAR-TRANSISTORS FOR HIGH-FREQUENCY AND HIGH-SPEED APPLICATIONS - BASIC TRANSPORT AND DESIGN
HINCKLEY, JM
SANKARAN, V
SINGH, J
TIWARI, S
[J]. PROCEEDINGS : IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, 1989, : 141 - 149
[22] HIGH-FREQUENCY PERFORMANCE LIMITATIONS OF MILLIMETER-WAVE HETEROJUNCTION BIPOLAR-TRANSISTORS
DAS, MB
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (05) : 604 - 614
[23] HIGH-FREQUENCY PERFORMANCE OF MOVPE NPN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ENQUIST, PM
HUTCHBY, JA
CHANG, MF
ASBECK, PM
SHENG, NH
HIGGINS, JA
[J]. ELECTRONICS LETTERS, 1989, 25 (17) : 1124 - 1125
[24] HIGH-FREQUENCY CHARACTERIZATION OF HETEROJUNCTION BIPOLAR-TRANSISTORS USING NUMERICAL-SIMULATION
PEJCINOVIC, B
TANG, TW
NAVON, DH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) : 233 - 239
[25] HIGH-FREQUENCY SI/SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS
KAMINS, TI
NAUKA, K
CAMNITZ, LH
KRUGER, JB
TURNER, JE
ROSNER, SJ
SCOTT, MP
HOYT, JL
KING, CA
NOBLE, DB
GIBBONS, JF
[J]. 1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 1989, : 647 - 650
[26] STATISTICAL CHARACTERISTICS OF THE COMPONENTS OF THE EQUIVALENT-CIRCUIT OF HIGH-FREQUENCY BIPOLAR-TRANSISTORS
UTOCHKIN, GV
[J]. TELECOMMUNICATIONS AND RADIO ENGINEERING, 1986, 40-1 (07) : 95 - 97
[27] JUNCTION TEMPERATURE-DEPENDENCE OF HIGH-FREQUENCY NOISE IN HETEROJUNCTION BIPOLAR-TRANSISTORS
JAHAN, MM
ANWAR, AFM
[J]. IEEE ELECTRON DEVICE LETTERS, 1995, 16 (12) : 551 - 553
[28] HIGH-GAIN, HIGH-FREQUENCY ALGAAS/GAAS GRADED BAND-GAP BASE BIPOLAR-TRANSISTORS WITH A BE DIFFUSION SETBACK LAYER IN THE BASE
MALIK, RJ
CAPASSO, F
STALL, RA
KIEHL, RA
RYAN, RW
WUNDER, R
BETHEA, CG
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 600 - 602
[29] QUASI-BALLISTIC CORRECTIONS TO BASE TRANSIT-TIME IN BIPOLAR-TRANSISTORS
HERBERT, DC
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (05) : 405 - 407
[30] TRANSIENT BASE DYNAMICS OF BIPOLAR-TRANSISTORS IN HIGH INJECTION
SEITCHIK, JA
HAMEL, JS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) : 2385 - 2390

← 1 2 3 4 5 →