METASTABLE BEHAVIOR OF THE DX CENTER IN SI-DOPED GAAS

被引：8
|
作者：
FUJISAWA, T
KRISTOFIK, J
YOSHINO, J
KUKIMOTO, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 12期
关键词：
D O I：
10.1143/JJAP.27.L2373
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L2373 / L2375
页数：3
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