METASTABLE BEHAVIOR OF THE DX CENTER IN SI-DOPED GAAS

被引：8
|
作者：
FUJISAWA, T
KRISTOFIK, J
YOSHINO, J
KUKIMOTO, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 12期
关键词：
D O I：
10.1143/JJAP.27.L2373
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L2373 / L2375
页数：3
相关论文
共 50 条
  • [31] EFFECT OF LIGHT ON THE DX CENTERS IN SI-DOPED AND TE-DOPED GAALAS
    SEGUY, P
    YU, PY
    LI, MF
    LEON, R
    CHAN, KT
    APPLIED PHYSICS LETTERS, 1990, 57 (23) : 2469 - 2471
  • [32] DX− center formation in planar-doped GaAs:Si in strong electric fields
    M. Asche
    O. G. Sarbey
    Journal of Experimental and Theoretical Physics, 2004, 99 : 574 - 584
  • [33] STRUCTURE OF PLANAR AGGREGATES OF SI IN HEAVILY SI-DOPED GAAS
    MUTO, S
    TAKEDA, S
    HIRATA, M
    FUJII, K
    IBE, K
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1992, 66 (02): : 257 - 268
  • [34] MAGNETOTRANSPORT INVESTIGATION OF SI-DOPED N(+) AL0.48IN0.52AS - OBSERVATION OF THE DX-CENTER
    FRUH, FE
    SALLESE, JM
    BECK, M
    MAUDE, DK
    WILLKE, U
    RABARY, M
    PORTAL, JC
    ILEGEMS, M
    SOLID STATE COMMUNICATIONS, 1994, 89 (04) : 323 - 325
  • [35] EVIDENCE FOR NEGATIVELY CHARGED DX-CENTER IN SI-DOPED ALGAAS FROM PERSISTENT PHOTOCONDUCTIVITY MEASUREMENTS
    DIAS, IFL
    DEOLIVEIRA, AG
    BEZERRA, JC
    MIRANDA, RC
    GUIMARAES, PSS
    SAMPAIO, JF
    CHAVES, AS
    SOLID STATE COMMUNICATIONS, 1991, 77 (05) : 327 - 330
  • [36] EVIDENCE FOR LARGE LATTICE-RELAXATION AT THE DX CENTER IN SI-DOPED ALXGA1-XAS
    MOONEY, PM
    NORTHROP, GA
    MORGAN, TN
    GRIMMEISS, HG
    PHYSICAL REVIEW B, 1988, 37 (14): : 8298 - 8307
  • [37] ISOCHRONAL ANNEALING OF SI-DOPED AND TE-DOPED GAAS
    KUNG, J
    LEUNG, P
    SPITZER, WG
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (08): : 839 - &
  • [38] LOCAL-VIBRATIONAL-MODE SPECTROSCOPY OF DX CENTERS IN SI-DOPED GAAS UNDER HYDROSTATIC-PRESSURE
    WOLK, JA
    KRUGER, MB
    HEYMAN, JN
    WALUKIEWICZ, W
    JEANLOZ, R
    HALLER, EE
    PHYSICAL REVIEW LETTERS, 1991, 66 (06) : 774 - 777
  • [39] Amphoteric native defect reactions in Si-doped GaAs
    Ky, N
    Reinhart, FK
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) : 718 - 724
  • [40] Transmission electron microscopy of Be implanted Si-doped GaAs
    Kroon, RE
    Neethling, JH
    Zolper, JC
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 182 (02): : 607 - 617
12345