STAGES OF FORMATION OF AN INTERFACE BETWEEN SILICON AND ITS THERMAL OXIDE

被引：0
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作者：
MONAKHOV, VV
ROMANOV, OV
KIRILLOV, SN
URITSKII, VY
SMIRNOV, VA
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1986年 / 20卷 / 03期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：300 / 302
页数：3
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