Deep surface states on the interface between SiC and its native thermal oxide

被引：0
|
作者：
P. A. Ivanov
K. I. Ignat’ev
V. N. Panteleev
T. P. Samsonova
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
来源：
Technical Physics Letters | 1997年 / 23卷
关键词：
Oxide; Conduction Band; Surface State; Thermal Oxide; Deep Surface;
D O I：
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中图分类号：
学科分类号：
摘要：
Deep surface states are discovered on the interface between 6H-SiC and its native thermal oxide by analyzing the C-V characteristics of metal-oxide-semiconductor structures measured at a high temperature (600 K). The maximum of the density of states distributed according to energy (Dtm=2×1012 cm−2· eV−1) is at an energy about 1.2 eV below the bottom of the conduction band of SiC. It is postulated that the states discovered are similar in nature to the Pb centers observed in the SiO2/Si system.
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页码：798 / 800
页数：2
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