Deep surface states on the interface between SiC and its native thermal oxide

被引：6
|
作者：
Ivanov, PA [1 ]
Ignat'ev, KI [1 ]
Panteleev, VN [1 ]
Samsonova, TP [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg, Russia
来源：
TECHNICAL PHYSICS LETTERS | 1997年 / 23卷 / 10期
关键词：
D O I：
10.1134/1.1261806
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Deep surface states are discovered on the interface between 6H-SiC and its native thermal oxide by analyzing the C-V characteristics of metal-oxide-semiconductor structures measured at a high temperature (600 K). The maximum of the density of states distributed according to energy (D-tm=2 x 10(12) cm(-2).eV(-1)) is at an energy about 1.2 eV below the bottom of the conduction band of SiC. It is postulated that the states discovered are similar in nature to the P-b centers observed in the SiO2/Si system. (C) 1997 American Institute of Physics. [S1063-7850(97)02710-9].
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收藏
页码：798 / 800
页数：3
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