Reactive deposition epitaxial growth of beta-FeSi2 film on Si(001): In situ observation by reflective high energy electron diffraction

被引：0
|
作者：
Wang, LW
Lin, CL
Shen, QW
Ni, RS
Zou, SC
机构：
来源：
CHINESE PHYSICS LETTERS | 1995年 / 12卷 / 10期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Reactive deposition epitaxial growth of beta-FeSi2 film on Si(001) has been studied by in situ observation of reflective high energy electron diffraction, Metastable strained phase was observed at initial stages. Surface roughness due to the islanding was observed during the deposition, The existed great tendency to transform the alignment of the orientation of crystallites into random as the thickness of deposited iron increased.
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页码：613 / 616
页数：4
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