In situ photoemission study of interface and film formation during epitaxial growth of Er2O3 film on Si(001) substrate

被引：0
|
作者：
朱燕艳 [1 ]
方泽波 [2 ]
刘永生
廖灿 [2 ]
陈圣 [2 ]
机构：
[1] Department of Mathematics and Physics, Shanghai University of Electric Power
[2] Surface Physics Laboratory (National Key Laboratory), Fudan University
来源：
Journal of Rare Earths | 2008年 / 26卷 / 06期
基金：
中国国家自然科学基金;
关键词：
high-κ; oxides; surface and interface chemistry; rare earths;
D O I：
暂无
中图分类号：
TB304 [材料腐蚀与保护];
学科分类号：
0805 ; 080502 ;
摘要：
Synchrotron radiation photoemission spectroscopy was used to study the formation process of Er2O3/Si(001) interface and film during epitaxial growth on Si. A shift in the O core-level binding energy was found accompanied by a shift in the Er2O3 valence band maxi-mum. This shift depended on the oxide layer thickness and interfacial structure. An interfacial layer was observed at the initial growth of Er2O3 film on Si, which was supposed to be attributed to the effect of Er atom catalytic oxidation effect.
引用
收藏
页码：775 / 777
页数：3
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