CHARACTERIZATION OF MICROSTRUCTURE IN ION-IMPLANTED GARNET BY TRANSMISSION ELECTRON-MICROSCOPY

被引:6
|
作者
YOSHIIE, T
BAUER, CL
KRYDER, MH
机构
关键词
D O I
10.1109/TMAG.1983.1062709
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1823 / 1825
页数:3
相关论文
共 50 条
  • [31] CHARACTERIZATION OF PROTON-IMPLANTED GAAS BY INFRARED REFLECTANCE SPECTROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY
    HAYES, M
    ENGELBRECHT, JAA
    NEETHLING, JH
    SOUTH AFRICAN JOURNAL OF SCIENCE, 1992, 88 (05) : 285 - 290
  • [32] Secondary-electron emission of ion-implanted semiconductors in scanning electron microscopy
    Nshanian, T.
    Applied Physics A: Solids and Surfaces, 1994, 59 (04): : 349 - 355
  • [33] CHARACTERIZATION OF CHOLELITHIC MICROSTRUCTURE BY ELECTRON-MICROSCOPY SCANNING
    LOGINOV, AS
    MARAKHOVSKY, YK
    GONCHARIK, II
    MARKOVA, LV
    CHEKAN, VA
    ARKHIV PATOLOGII, 1988, 50 (02) : 24 - 28
  • [34] APPLICATION OF TRANSMISSION ELECTRON-MICROSCOPY (TEM) TO THE STUDY OF IMPLANTED SEMICONDUCTORS
    CLAVERIE, A
    VIEU, C
    FAURE, J
    BEAUVILLAIN, J
    JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES, 1988, 13 (03): : A10 - A10
  • [35] TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF KR+-IMPLANTED SILICON
    MORAWIEC, J
    ACTA PHYSICA POLONICA A, 1994, 85 (05) : 819 - 824
  • [36] TRANSMISSION ELECTRON-MICROSCOPY OF LI+ IMPLANTED AL FILMS
    SINGH, A
    KNYSTAUTAS, EJ
    VACUUM, 1985, 35 (12) : 555 - 559
  • [37] TRANSMISSION ELECTRON-MICROSCOPY ON HELIUM IMPLANTED NIOBIUM TENSILE SPECIMENS
    CHARLOT, LA
    BRIMHALL, JL
    ATTERIDGE, DG
    JOURNAL OF NUCLEAR MATERIALS, 1977, 66 (1-2) : 203 - 208
  • [38] POROUS SILICON MICROSTRUCTURE AS STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY
    CHUANG, SF
    COLLINS, SD
    SMITH, RL
    APPLIED PHYSICS LETTERS, 1989, 55 (15) : 1540 - 1542
  • [39] HIGH-RESOLUTION ELECTRON-MICROSCOPY ANALYSIS OF ION-BEAM INDUCED ANNEALING OF MEV AS+ ION-IMPLANTED SILICON
    ZHANG, BX
    WANG, ZL
    QI, L
    ZHANG, PJ
    ZHENG, JG
    WANG, LC
    DU, AY
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 434 - 438
  • [40] CHARACTERIZATION OF SEMICONDUCTOR SILICON BY TRANSMISSION ELECTRON-MICROSCOPY
    TAN, TY
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1984, 452 : 170 - 176