MONTE-CARLO SIMULATION OF GAAS SUB-MICRON N+-N-N+ DIODE WITH GAAIAS HETEROJUNCTION CATHODE

被引:4
|
作者
TOMIZAWA, K [1 ]
AWANO, Y [1 ]
HASHIZUME, N [1 ]
SUZUKI, F [1 ]
机构
[1] ELECTROTECH LAB,NIIHARI,IBARAKI,JAPAN
关键词
D O I
10.1049/el:19820731
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1067 / 1069
页数:3
相关论文
共 50 条
  • [21] Ensemble Monte Carlo Electron Transport Simulation for GaN n+–n–n+ Diode
    Baghdadi Berrabah
    Choukria Sayah
    Souheyla Ferouani
    Sofiane Derrouiche
    Benyounes Bouazza
    Transactions on Electrical and Electronic Materials, 2021, 22 : 290 - 300
  • [22] MONTE-CARLO CALCULATION OF DRIFT VELOCITY OF ELECTRONS IN N-GAAS
    BAUHAHN, PE
    CURTICE, WR
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1106 - &
  • [23] Ensemble Monte Carlo Electron Transport Simulation for GaN n plus -n-n plus Diode
    Berrabah, Baghdadi
    Sayah, Choukria
    Ferouani, Souheyla
    Derrouiche, Sofiane
    Bouazza, Benyounes
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2021, 22 (03) : 290 - 300
  • [24] SINGLE IMPURITY-ASSISTED TUNNELLING IN SUB-MICRON n + n - n + MULTILAYERS.
    Main, P.C.
    Roche, I.P.
    Eaves, L.
    Owers-Bradley, J.R.
    Taylor, D.C.
    Singer, K.E.
    Hill, G.
    Pate, M.A.
    1600, (02):
  • [25] Electron transport simulation in bulk wurtzite ZnO and its n+-n-n+ diode, compared with GaN
    Baghsiyahi, Fatemeh Badieian
    Roknabadi, Mahmood Rezaee
    Arabshahi, Hadi
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2013, 47 : 252 - 256
  • [26] MONTE-CARLO SIMULATION OF LATTICE CP(N-1) MODELS AT LARGE-N
    VICARI, E
    PHYSICS LETTERS B, 1993, 309 (1-2) : 139 - 144
  • [27] MONTE-CARLO SIMULATION OF WATER BEHAVIOR AROUND THE DIPEPTIDE N-ACETYLALANYL-N-METHYLAMIDE
    HAGLER, AT
    OSGUTHORPE, DJ
    ROBSON, B
    SCIENCE, 1980, 208 (4444) : 599 - 601
  • [28] MONTE-CARLO SIMULATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    TOMIZAWA, K
    AWANO, Y
    HASHIZUME, N
    IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) : 362 - 364
  • [29] VOLTAGE DISTRIBUTION IN N+-N-N+ AND METAL-CATHODE N-N+ GAAS X-BAND OSCILLATORS USING A SEM
    TEE, WJ
    FARQUHAR, SG
    GOPINATH, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 655 - 659
  • [30] MONTE-CARLO CALCULATION OF DIFFUSION-COEFFICIENT IN N-TYPE GAAS
    AISHIMA, A
    YOKOO, K
    ONO, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (05) : 959 - 960