VOLTAGE DISTRIBUTION IN N+-N-N+ AND METAL-CATHODE N-N+ GAAS X-BAND OSCILLATORS USING A SEM

被引:1
|
作者
TEE, WJ [1 ]
FARQUHAR, SG [1 ]
GOPINATH, A [1 ]
机构
[1] UNIV WALES,UNIV COLL N WALES,SCH ELECTR,BANGOR LL57 2UW,GWYNEDD,WALES
关键词
D O I
10.1109/T-ED.1978.19150
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:655 / 659
页数:5
相关论文
共 50 条
  • [1] VOLTAGE DISTRIBUTIONS IN X-BAND N+-N-N+ GUNN DEVICES USING A SEM
    FENTEM, PJ
    GOPINATH, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (10) : 1159 - 1165
  • [2] LOCAL MICROWAVE-HEATING OF THE ELECTRONS IN SEMICONDUCTOR STRUCTURES OF N-N+,N+-N-N+ TYPE
    BILENKO, DI
    KUTSEVLYAK, PI
    LUNKOV, AE
    RADIOTEKHNIKA I ELEKTRONIKA, 1980, 25 (03): : 606 - 611
  • [3] NOISE IN MICRON N+-N-N+ STRUCTURES MADE OF GAAS
    BAREIKIS, V
    LIBERIS, Y
    MATULENIS, A
    MILYUSHITE, R
    SAKALAS, P
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (05): : 558 - 560
  • [4] NEW NEGATIVE CONDUCTANCES IN GAAS N+-N-N+ BALLISTIC DIODES
    AISHIMA, A
    FUKUSHIMA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (04): : L255 - L257
  • [5] Regenerative switching phenomenon of a GaAs metal-n-δ(p+)-n-n+ structure
    Guo, Der-Feng
    Yeou, Wen-Chen
    Lour, Wen-Shiung
    Hsu, Wei-Chou
    Liu, Wen-Chau
    Japanese Journal of Applied Physics, Part 2: Letters, 1993, 32 (7 B):
  • [6] REGENERATIVE SWITCHING PHENOMENON OF A GAAS METAL-N-DELTA(P+)-N-N+ STRUCTURE
    GUO, DF
    YEOU, WC
    LOUR, WS
    HSU, WC
    LIU, WC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (7B): : L1011 - L1013
  • [7] BISTABLE SWITCHING IN SUPERCRITICAL N+-N-N+ GAAS TRANSFERRED ELECTRON DEVICES
    JONDRUP, P
    JEPPESEN, P
    JEPPSSON, B
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (09) : 1028 - 1035
  • [8] MONTE-CARLO SIMULATION OF GAAS SUB-MICRON N+-N-N+ DIODE WITH GAAIAS HETEROJUNCTION CATHODE
    TOMIZAWA, K
    AWANO, Y
    HASHIZUME, N
    SUZUKI, F
    ELECTRONICS LETTERS, 1982, 18 (25-2) : 1067 - 1069
  • [9] CURRENT-VOLTAGE CHARACTERISTICS OF N-N+ POINT CONTACTS
    ASHMONTAS, SP
    OLEKAS, AP
    POZHELA, YK
    LAPINSKAS, RB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (07): : 759 - 763
  • [10] EFFECTS OF DOPING VARIATIONS ON ELECTRON-TRANSPORT IN GAAS N+-N-N+ STRUCTURES
    TIAN, H
    KIM, KW
    LITTLEJOHN, MA
    MISHRA, UK
    HASHEMI, M
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (12) : 5695 - 5701