Regenerative switching phenomenon of a GaAs metal-n-δ(p+)-n-n+ structure

被引：0

作者：

Guo, Der-Feng ^{[1
]}

Yeou, Wen-Chen ^{[1
]}

Lour, Wen-Shiung ^{[1
]}

Hsu, Wei-Chou ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Private Kung-San Inst of Technology, and Commerce, Tainan Hsien, Taiwan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1993年 / 32卷 / 7 B期

关键词：

Semiconducting gallium arsenide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[1] REGENERATIVE SWITCHING PHENOMENON OF A GAAS METAL-N-DELTA(P+)-N-N+ STRUCTURE
GUO, DF
YEOU, WC
LOUR, WS
HSU, WC
LIU, WC
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (7B): : L1011 - L1013
[2] EFFECTS OF THE 3RD-ELECTRODE POSITIONS ON 3-TERMINAL GAAS P+N-DELTA(P+)N-N+ SWITCHING DEVICES
YARN, KF
WANG, YH
LIOU, CP
JAME, MS
CHANG, CY
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1987, 134 (04): : 129 - 135
[3] Surface photovoltage spectroscopy of n-n+ and p-n+ AlGaAs/GaAs heterojunctions
Kumar, S
Ganguli, T
Bhattacharya, P
Roy, UN
Chandvankar, SS
Arora, BM
APPLIED PHYSICS LETTERS, 1998, 72 (23) : 3020 - 3022
[4] VOLTAGE DISTRIBUTION IN N+-N-N+ AND METAL-CATHODE N-N+ GAAS X-BAND OSCILLATORS USING A SEM
TEE, WJ
FARQUHAR, SG
GOPINATH, A
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 655 - 659
[5] GAAS N+-P--N+ BALLISTIC STRUCTURE
SHUR, MS
EASTMAN, LF
ELECTRONICS LETTERS, 1980, 16 (13) : 522 - 523
[6] Impact ionization in nonuniformly heated silicon p+–n–n+ and n+–p–p+ structures
A. M. Musaev
Semiconductors, 2016, 50 : 462 - 465
[7] EFFECTS OF CATHODE LENGTHS AND EPITAXIAL LAYER WIDTHS ON N1+N1-DELTA(P+)N2-N2+P+ AND N1-DELTA(P+)N2P+ SWITCHING DEVICES
ALBUSTANI, A
IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS, 1990, 137 (06): : 463 - 466
[8] NEW GAAS N+-P-DELTA(N+)-I-DELTA(P+)-I-N+ SWITCHING DEVICE GROWN BY MOLECULAR-BEAM EPITAXY
LIU, WC
SUN, CY
ELECTRONICS LETTERS, 1991, 27 (19) : 1704 - 1705
[9] REVEALING METALLURGICAL BOUNDARY IN EPITAXIAL SILICON N-N+ AND N-N+-P STRUCTURES
BOITSOV, YP
PROKHOROV, VI
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1971, 14 (05): : 1527 - +
[10] CALCULATION OF EPITAXIAL LAYER PROFI6ES FOR N-N+ GAAS
BERMAN, R
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (11) : C328 - &

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